| Image | Part number | Package | VDSS(V) | RDson(mΩ) | Vth(V) | Ids(A) | Ids(pulse)(A) | Qoss(nC) | Qg(nC) | Usefor |
|---|---|---|---|---|---|---|---|---|---|---|
| GH065C018T1TF | TO247-3L | 650 | 15 | 93 | 4 | 600 | 430 | 74 | Datacom, Broad industrial | |
| GH070E135A1DC | DFN8×8 | 700 | 100 | 16 | 1.6 | 34 | 19 | 3.5 | AC/DC converters | |
| GH070E240A1DB | DFN5×6 | 700 | 180 | 10 | 1.6 | 18 | 17 | 2 | AC/DC converters | |
| GH065G190G1DC | DFN8×8 | 650 | 150 | 11 | 1.7 | 19 | 19 | 2.2 | Power Adapters | |
| GH065C041T1TF | TO247-3L | 650 | 35 | 46 | 4 | 240 | 150 | 22 | Datacom | |
| GH100V032Y3EB | En-FCQFN3*6 | 100 | 2.5 | 100 | 1.1 | 320 | 62 | 66 | BMS battery protection | |
| GH100Y016Y3EL | En-FCLGA5x6 | 100 | 1.2 | 470 | 1.1 | 980 | 102 | 25 | DC-DC converter |
Ganhonor Semiconductor Co., Ltd
Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.