GSR065E011

GSR065E011 is an enhanced GaN on Silicon power transistor. The characteristics of GaN allow high current, high breakdown voltage and high switching frequency. GSR semiconductors use advanced epitaxy and design technologies to simplify manufacturability while improving efficient power switches.

GaN chip GaN third generation semiconductor Jinshajiang Semiconductor

Detail DataSheet

Product Description

GSR065E011（650V150mΩGaNFET）
GSR065E011 is an enhanced GaN on Silicon power transistor. The characteristics of GaN allow high current, high breakdown voltage and high switching frequency. This is a bottom cooled transistor that provides extremely low case thermal resistance for demanding high-power applications. GSR semiconductors use advanced epitaxy and design technologies to simplify manufacturability while improving efficient power switches;

Absolute Maximum Ratings (Tcase = 25 °C except as noted)

Parameter	Symbol	Value	Unit
Operating Junction Temperature	TJ	-55 to +150	°C
Storage Temperature Range	TS	-55 to +150	°C
Drain-to-Source Voltage	VDS	650	V
Drain-to-Source Voltage - transient (Note 1)	VDS(transient)	850	V
Gate-to-Source Voltage	VGS	-10 to +7	V
Gate-to-Source Voltage - transient (Note 1)	VGS(transient)	-20 to +10	V
Continuous Drain Current (Tcase = 25 °C)	IDS	11	A
Continuous Drain Current (Tcase = 100 °C)	IDS	7.2	A
Pulse Drain Current (Pulse width 10 µs, VGS = 6 V) (Note 2)	IDS Pulse	19	A

For ≤1 µs
Defined by product design and characterization. Value is not tested to full current in production.

Thermal Characteristics (Typical values unless otherwise noted)

Parameter	Symbol	Value	Units
Thermal Resistance (junction-to-case) – bottom side	RΘJC	1.4	°C /W
Thermal Resistance (junction-to-ambient) (Note 3)	RΘJA	36.5	°C /W
Maximum Soldering Temperature (MSL3 rated)	TSOLD	260	°C

Device mounted on 1.6 mm PCB thickness FR4, 4-layer PCB with 2 oz. copper on each layer. The recommendation for thermal vias under the thermal pad is 0.3 mm diameter (12 mil) with 0.635 mm pitch (25 mil). The copper layers under the thermal pad and drain pad are 25 x 25 mm2 each. The PCB is mounted in horizontal position without air stream cooling.

Ordering Information

Ordering code	Package type	Packing method	Qty	Reel Diameter	Reel Width
GS-065-011-1-L-TR	5x6 mm PDFN	Tape-and-Reel	3000	13” (330 mm)	12mm
GS-065-011-1-L-MR	5x6 mm PDFN	Mini-Reel	250	7” (180 mm)	12mm

Electrical Characteristics (Typical values at TJ = 25 °C, VGS = 6 V unless otherwise noted)

Parameters	Sym.	Min.	Typ.	Max.	Units	Conditions
Drain-to-Source Blocking Voltage	V(BL)DSS	650			V	VGS = 0 V, IDSS ≤ 18 µA
Drain-to-Source On Resistance	RDS(on)		150	190	mΩ	VGS = 6 V, TJ = 25 °C IDS = 3.2 A
Drain-to-Source On Resistance	RDS(on)		380		mΩ	VGS = 6 V, TJ = 150 °C IDS = 3.2 A
Gate-to-Source Threshold	VGS(th)	1.1	1.7	2.6	V	VDS = VGS, IDS = 2.4 mA
Gate-to-Source Current	IGS		57		µA	VGS = 6 V, VDS = 0 V
Gate Plateau Voltage	Vplat		3.5		V	VDS = 400 V, IDS = 11 A
Drain-to-Source Leakage Current	IDSS		0.7	18	µA	VDS = 650 V, VGS = 0 V TJ = 25 °C
Drain-to-Source Leakage Current	IDSS		143		µA	VDS = 650 V, VGS = 0 V TJ = 150 °C
Internal Gate Resistance	RG		1.4		Ω	f = 5 MHz
Input Capacitance	CISS		70		pF	VDS = 400 V
						VDS = 400 V
Output Capacitance	COSS		20		pF	VGS = 0 V f = 100 kHz
Reverse Transfer Capacitance	CRSS		0.4		pF	VGS = 0 V f = 100 kHz
Effective Output Capacitance, Energy Related (Note 4)	CO(ER)		30		pF	VGS = 0 V VDS = 0 to 400 V
Effective Output Capacitance, Time Related (Note 5)	C O(TR)		47		pF	VGS = 0 V VDS = 0 to 400 V
Total Gate Charge	QG		2.2		nC	VGS = 0 to 6 V VDS = 400 V
Gate-to-Source Charge	Q GS		0.7		nC

Gate-to-Drain Charge	QGD		0.7		nC
Output Charge	QOSS		19		nC	VGS = 0 V, VDS = 400 V
Reverse Recovery Charge	QRR		0		nC

CO(ER) is the fixed capacitance that would give the same stored energy as COSS while VDS is rising from 0 V to the stated

VDS.

CO(TR) is the fixed capacitance that would give the same charging time as COSS while VDS is rising from 0 V to the stated VDS.

Electrical Characteristics cont’d (Typical values at TJ = 25 °C, VGS = 6 V unless otherwise noted)

Parameters	Sym.	Min.	Typ.	Max.	Units	Conditions
Turn-On Delay	tD(on)		5		ns	VDD = 400 V, VGS = 0-6 V, IDS = 6 A, RG(on) = 15 Ω, RG(off) = 2 Ω, L = 300 µH, LP = 9 nH (Notes 6,7,8)
Rise Time	t R		5		ns
Turn-Off Delay	tD(off)		8		ns
Fall Time	tF		10		ns
Switching Energy during turn-on	Eon		20		µJ
Switching Energy during turn-off	Eoff		5.8		µJ
Output Capacitance Stored Energy	E OSS		2.4		µJ	VDS = 400 V VGS = 0 V, f = 100 kHz

See Figure 16 for switching test circuit diagram.
See Figure 17 for switching time definition waveforms.
LP = parasitic inductance.

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Name	Version	Description	Download
GSR065E011B-datasheet-CN	V1.0	中文参数说明文档.	Download