GSR065D200 is a high-voltage D-type GaN transistor. It provides patented high-density horizontal layout GaN power transistors and advanced packaging, with extremely low RDS (ON), extremely fast switching performance and convenient small size. It is very effective in applications requiring high current and fast switching.
The D3GaN (Direct Drive D-Mode) GSR065D200A Power Switch integrates a patented, high-density, lateral GaN power transistor, into a Normally - Off product with extremely low RDS(ON) and exceptionally efficient switching performance. The D3GaN technology has been implemented into an Isolated High Power SMD package.
| Parameter | Value |
| VDS (V) | 650 |
| RDS(ON) (mΩ) | 22 |
| QG (nC) | 41 |
| ID,pulse(A) | 250 |
| ID (A) | 100 |
| Maximum ratings (Tc =25ºC unless otherwise specified) | ||||||
| Parameter | Symbol | Values | Unit | Conditions | ||
| Min | Typical | Max | ||||
| Continuous drain current | ID | 100 80 | A | T C =25C TC =100C | ||
| Pulsed drain current1) | ID,pulse | - | - | 250 | A | |
| Gate source voltage2) | VGS | -25 | - | +6 | V | |
| Power dissipation | PTOT | - | - | 278 | W | |
| Operating and storage temperature | Tj ,Tstg | -55 | - | + 150 | C | |
| TC | - | - | +150 | |||
| Continuous reverse current | Is | - | - | 100 | A | |
| Reverse pulse current1) | Is,pulse | - | - | 250 | A | |
| Thermal characteristics | ||||||
| Parameter | Symbol | Values | Unit | Conditions | ||
| Min | Typical | Max | ||||
| Thermal resistance, junctioncase | R θJC | - | - | 0.3 | C/W | Junction to top thermal pad |
| Thermal resistance, junction ambient | R θJA | - | - | 65 | C/W | |
| Soldering peak body temperature | Tp | - | - | 260 | C | |
| Time within 5°C from peak soldering temperature | t c | 30 | S | |||
| Electrical characteristics (Tc =25C unless otherwise specified) | ||||||
| Parameter | Symbol | Values | Unit | Conditions | ||
| Min | Typical | Max | ||||
| Static | ||||||
| Drain-source breakdown voltage | V(BR)DS | 650 | - | 800 | V | VGS= -15V, Id= 1mA |
| Gate threshold voltage1)2) | Vth | 6.3 | 6.8 | 8.7 | V | ID=1mA, VDD=15V |
| Drain source leakage current1) | IDSS | - | 20 | 60 | µA | V GS= -15V V DS= 650V Tj=25C |
| - | 75 | 200 | V GS= -15V VDS= 650V Tj=150C | |||
| GaN Gate leakage current | IGSS | - | 0.01 | 200 | uA | V DS= 400V VGS= -15V |
| Gate resistance | RG | - | 1.4 | - | Ω | f =1Mhz |
| Drain-source on state resistance | RDS(ON) | - | 22 | 27 | mΩ | V G=15V ID=35A T j =25C |
| - | 42 | 52 | V G=15V ID=35A Tj =150C | |||
| Reverse voltage drop- GaN non conductive | V R | - | - | 7.5 | V | ID=10A Tj =25C |
| - | - | 9.5 | ID=10A Tj =150C | |||
| Reverse voltage drop- GaN conductive | V R | - | - | 0.2 | V | ID=10A Tj =25C |
| - | - | 0.4 | ID=10A Tj =150C | |||
| Reverse recovery time | trr | - | - | 0 | ns | |
| Reverse recovery charge | Qrr | - | - | 0 | nC | |
| Output Charge | Qoss | - | - | 171 | nC | V G=0V VDS=400V |
| Activation signal2) | V(As,En) | - | 0 | - | V | VDD= -15V |
| Dynamic | ||||||
| Input capacitance | Ciss | - | 760 | 800 | pF | f=1MHz VG=0V VDS=400V |
| Output capacitance | Coss | - | 200 | 240 | ||
| Reverse transfer capacitance | Crss | - | 26 | 30 | ||
| Effective Output Capacitance, Energy Related | CO(ER) | - | - | 278 | pF | VG=0V VDS=0 to 400V |
| Turn-on delay time3) | td(on) | - | 9 | - | ns | VDS=400V VG=0 -15V 3) Rcon=100 Ω 3)Rcoff=20 Ohm ID=35A |
| Fall time3) | tf | - | 10.8 | - | ||
| Turn-off delay time3) | td(off) | - | 15.5 | - | ||
| Rise time 3) | tr | - | 6.5 | - |
| Electrical characteristics (Tc =25ºC unless otherwise specified) | ||||||
| Parameter | Symbol | Values | Unit | Conditions | ||
| Min | Typical | Max | ||||
| Gate charge characteristic s | ||||||
| Gate to source charge1) | QGS | - | 4.3 | - | nC | VGS2)=0V to 10V VDS=400V ID=30A
|
| Gate to drain charge1) | QGD | - | 33 | - | ||
| Total gate charge1) | QG | - | 41 | - | ||
| Gate plateau voltage1) | Vplateau | 6 | - | 7 | V | |
| Case to drain Capacitance | ||||||
| Capacitance | CC | - | 20 | - | pF | @ 1 MHz 0.1V RMS |
| Pin Characteristics | ||||||
| Parameter | Symbol | Values | Unit | Conditions | ||
| Min | Typical | Max | ||||
| Pin 1 Activation signal 2) | ||||||
| Disable voltage | Pin 1 | 0 | - | 9.1 | V | VDS=400V
|
| Enable voltage | Pin 1 | 9.3 | 15 | 15 | ||
| Pin 2 Com signal 3) | ||||||
| Voltage at disable mode | Pin 2 | 8 | V | VDS >20V | ||
| Voltage at Enable mode | Pin 2 | 0 | 0 | 0.1 | V31=Id*0.002 | |
| Pin 3 Gate 2) | ||||||
| Gate Voltage for non-Conducting mode | Pin 3 | 0 | - | 4.5 | V
| VDS=400V
|
| Gate Voltage for conducting mode | Pin 3 | 5.5 | - | 12 | ||
| Pin 4 Com Power 2) | ||||||
| Pin 4 | 10 | 15 | 15 | V | ||
| Pin 5 Enable must be connected to pin1 | ||||||
| Picture | Name | Type | Description | Detail |
|---|---|---|---|---|
| GSR065D100 | High power GaN chips | The D3GaN (direct d... | 查看 |
| Name | Version | Description | Download |
|---|---|---|---|
| GSR065D200A-datasheet-CN | V1.0 | 中文参数说明文档. | Download |
Ganhonor Semiconductor Co., Ltd
Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.
