GSR065D25 series 650V, 72m Ω GaN FETs are normally closed devices. It provides superior reliability and performance by combining the most advanced high-voltage GaNHEMT with low-voltage silicon MOSFETs. It provides higher efficiency than silicon through lower gate charge, lower cross loss and smaller reverse recovery charge.
Product Description
GSR065D25(650VGaNFETPQFNSeries)
GSR065D25 series 650V, 72m Ω GaN FETs are normally closed devices& nbsp; It provides superior reliability and performance by combining the most advanced high-voltage GaNHEMT with low-voltage silicon MOSFETs.
It provides higher efficiency than silicon through lower gate charge, lower cross loss and smaller reverse recovery charge.
Product characteristics
Product application
| Key Specifications | |
| VDSS (V) | 650 |
| VDSS(TR) (V) | 800 |
| RDS(on)eff (mΩ) max* | 85 |
| QRR (nC) typ | 89 |
| QG (nC) typ | 9.3 |
| Symbol | Parameter | Limit Value | Unit | |
| VDSS | Drain to source voltage (TJ = -55°C to 150°C) | 650 | V | |
| VDSS(TR) | Transient drain to source voltage a | 800 | ||
| VGSS | Gate to source voltage | ±20 | ||
| PD | Maximum power dissipation @TC=25°C | 96 | W | |
| ID | Continuous drain current @TC=25°C b | 25 | A | |
| Continuous drain current @TC=100°C b | 16 | A | ||
| IDM | Pulsed drain current (pulse width: 10µs) | 120 | A | |
| (di/dt)RDMC | Reverse diode di/dt, repetitive c | 1200 | A/µs | |
| (di/dt)RDMT | Reverse diode di/dt, transient d | 2600 | A/µs | |
| TC | Operating temperature | Case | -55 to +150 | °C |
| TJ | Junction | -55 to +150 | °C | |
| TS | Storage temperature | -55 to +150 | °C | |
| TSOLD | Reflow soldering temperature e | 260 | °C | |
Notes:
Thermal Resistance
| Symbol | Parameter | Maximum | Unit |
| RΘJC | Junction-to-case | 1.3 | °C/W |
| RΘJA | Junction-to-ambient f | 62 | °C/W |
Notes: f. Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling, with 6cm2 copper area and 70µm thickness) | |||
Recommended gate drive: (0V, 12V) with RG(tot) = 50-70Ω, where RG(tot) = RG + RDRIVER
| Gate Ferrite Bead (FB1) | Required DC Link RC Snubber (RCDCL) a | Recommended Switching Node RC Snubber (RCSN) b, c |
| 240ohm at 100MHz | [10nF + 10Ω] x 2 | 68pF + 15Ω |
Notes:
Electrical Parameter (TJ=25°C unless otherwise stated)
| Symbol | Parameter | Min | Typ | Max | Unit | Test Conditions |
| Forward Device Characteristics | ||||||
| VDSS(BL) | Drain-source voltage | 650 | — | — | V | VGS=0V |
| VGS(th) | Gate threshold voltage | 3.3 | 4 | 4.8 | V | VDS=VGS, ID=0.7mA |
| RDS(on)eff | Drain-source on-resistance a | — | 72 | 85 | mΩ | VGS=10V, ID=16A,TJ=25°C |
| — | 148 | — | VGS=10V, ID=16A, TJ=150°C | |||
| IDSS | Drain-to-source leakage current | — | 3 | 30 | µA | VDS=650V, VGS=0V, TJ=25°C |
| — | 12 | — | VDS=650V, VGS=0V, TJ=150°C | |||
| IGSS | Gate-to-source forward leakage current | — | — | 100 | nA | VGS=20V |
| Gate-to-source reverse leakage current | — | — | -100 | VGS=-20V | ||
| CISS | Input capacitance | — | 600 | — | pF | VGS=0V, VDS=400V, f=1MHz |
| COSS | Output capacitance | — | 88 | — | ||
| CRSS | Reverse transfer capacitance | — | 4.5 | — | ||
| CO(er) | Output capacitance, energy related b | — | 131 | — | pF | VGS=0V, VDS=0V to 400V |
| CO(tr) | Output capacitance, time related c | — | 217 | — | ||
| QG | Total gate charge | — | 9.3 | — | nC | V DS=400V, VGS=0V to 10V, ID=16A |
| QGS | Gate-source charge | — | 3.5 | — | ||
| QGD | Gate-drain charge | — | 2.3 | — | ||
| QOSS | Output charge | — | 85 | — | nC | VGS=0V, VDS=0V to 400V |
| tD(on) | Turn-on delay | — | 29 | — | ns | VDS=400V, VGS=0V to 12V, ID=16A, RG=50Ω, ZFB= 240Ω at 100MHz |
| tR | Rise time | — | 7.5 | — | ||
| tD(off) | Turn-off delay | — | 45 | — | ||
| tF | Fall time | — | 8.2 | — | ||
Notes:
| Symbol | Parameter | Min | Typ | Max | Unit | Test Conditions |
| Reverse Devi ce Characteristics | ||||||
| IS | Reverse current | — | — | 16 | A | V GS=0V, TC=100°C, ≤25% duty cycle |
| VSD | Reverse voltage a | — | 1.8 | — | V | VGS=0V, IS=16A |
| — | 1.3 | — | VGS=0V, IS=8A | |||
| tRR | Reverse recovery time | — | 33 | — | ns | IS=16A, VDD=400V, di/dt=1000A/s |
| QRR | Reverse recovery charge | — | 89 | — | nC | |
| (di/dt)RDMC | Reverse diode di/dt, repetitive b | — | — | 1200 | A/µs | |
| IRDMC1 | Reverse diode switching current, repetitive (dc) c, e | — | — | 18 | A | Circuit implementation and parameters on page 3 |
| IRDMC2 | Reverse diode switching current, repetitive (ac) c, e | — | — | 23 | A | Circuit implementation and parameters on page 3 |
| (di/dt)RDMT | Reverse diode di/dt, transient d | — | — | 2600 | A/µs | |
| IRDMT | Reverse diode switching current, transient d,e | — | — | 28 | A | Circuit implementation and parameters on page 3 |
Notes:
| Name | Version | Description | Download |
|---|---|---|---|
| GSR065D25-datasheet-CN | V1.0 | 中文参数说明文档. | Download |
Ganhonor Semiconductor Co., Ltd
Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.
