GSR065D25 系列 650V、72mΩ 氮化镓 (GaN) FET 为常关型器件。 它通过结合先进的高压 GaNHEMT 与低压硅 MOSFET来提供卓越的可靠性和性能。通过更低的栅极电荷、更低的交叉损耗和更小的反向恢复电荷提供比硅更高的效率。
产品说明
GSR065D25(650V GaN FET PQFN Series)
GSR065D25 系列 650V、72mΩ 氮化镓 (GaN) FET 为常关型器件。 它通过结合先进的高压 GaNHEMT 与低压硅 MOSFET来提供卓越的可靠性和性能。
通过更低的栅极电荷、更低的交叉损耗和更小的反向恢复电荷提供比硅更高的效率。
产品特征
产品应用
| 主要规格 | |
| VDSS (V) | 650 |
| VDSS(TR) (V) | 800 |
| RDS(on)eff (mΩ) max* | 85 |
| QRR (nC) typ | 89 |
| QG (nC) typ | 9.3 |
绝对最大额定值 （Tc=25°C 除非另有说明)
| Symbol | Parameter | Limit Value | Unit | |
| VDSS | Drain to source voltage (TJ = -55°C to 150°C) | 650 |
V | |
| VDSS(TR) | Transient drain to source voltage a | 800 | ||
| VGSS | Gate to source voltage | ±20 | ||
| PD | Maximum power dissipation @TC=25°C | 96 | W | |
ID | Continuous drain current @TC=25°C b | 25 | A | |
| Continuous drain current @TC=100°C b | 16 | A | ||
| IDM | Pulsed drain current (pulse width: 10µs) | 120 | A | |
| (di/dt)RDMC | Reverse diode di/dt, repetitive c | 1200 | A/µs | |
| (di/dt)RDMT | Reverse diode di/dt, transient d | 2600 | A/µs | |
| TC |
Operating temperature | Case | -55 to +150 | °C |
| TJ | Junction | -55 to +150 | °C | |
| TS | Storage temperature | -55 to +150 | °C | |
| TSOLD | Reflow soldering temperature e | 260 | °C | |
Notes:
| Symbol | Parameter | Maximum | Unit |
| RΘJC | Junction-to-case | 1.3 | °C/W |
| RΘJA | Junction-to-ambient f | 62 | °C/W |
Notes: f. 用于漏极连接的一层环氧树脂 PCB 上的器件（垂直且无气流冷却，铜面积为 6cm2，厚度为 70µm） | |||
推荐的栅极驱动：(0V, 12V) RG(tot) = 50-70Ω, RG(tot) = RG + RDRIVER
| Gate Ferrite Bead (FB1) | Required DC Link RC Snubber (RCDCL) a | Recommended Switching Node RC Snubber (RCSN) b, c |
| 240ohm at 100MHz | [10nF + 10Ω] x 2 | 68pF + 15Ω |
Notes:
栅回路:
电源回路:
电气参数 (TJ=25°C 除非另有说明)
| Symbol | Parameter | Min | Typ | Max | Unit | Test Conditions |
| Forward Device Characteristics | ||||||
| VDSS(BL) | Drain-source voltage | 650 | — | — | V | VGS=0V |
| VGS(th) | Gate threshold voltage | 3.3 | 4 | 4.8 | V | VDS=VGS, ID=0.7mA |
RDS(on)eff |
Drain-source on-resistance a | — | 72 | 85 |
mΩ | VGS=10V, ID=16A,TJ=25°C |
| — | 148 | — | VGS=10V, ID=16A, TJ=150°C | |||
IDSS |
Drain-to-source leakage current | — | 3 | 30 |
µA | VDS=650V, VGS=0V, TJ=25°C |
| — | 12 | — | VDS=650V, VGS=0V, TJ=150°C | |||
IGSS | Gate-to-source forward leakage current | — | — | 100 |
nA | VGS=20V |
| Gate-to-source reverse leakage current | — | — | -100 | VGS=-20V | ||
| CISS | Input capacitance | — | 600 | — |
pF |
VGS=0V, VDS=400V, f=1MHz |
| COSS | Output capacitance | — | 88 | — | ||
| CRSS | Reverse transfer capacitance | — | 4.5 | — | ||
| CO(er) | Output capacitance, energy related b | — | 131 | — |
pF |
VGS=0V, VDS=0V to 400V |
| CO(tr) | Output capacitance, time related c | — | 217 | — | ||
| QG | Total gate charge | — | 9.3 | — |
nC |
VDS=400V, VGS=0V to 10V, ID=16A |
| QGS | Gate-source charge | — | 3.5 | — | ||
| QGD | Gate-drain charge | — | 2.3 | — | ||
| QOSS | Output charge | — | 85 | — | nC | VGS=0V, VDS=0V to 400V |
| tD(on) | Turn-on delay | — | 29 | — |
ns |
VDS=400V, VGS=0V to 12V, ID=16A, RG=50Ω, ZFB= 240Ω at 100MHz |
| tR | Rise time | — | 7.5 | — | ||
| tD(off) | Turn-off delay | — | 45 | — | ||
| tF | Fall time | — | 8.2 | — | ||
Notes:
电气参数 (TJ=25°C 除非另有说明)
| Symbol | Parameter | Min | Typ | Max | Unit | Test Conditions |
| Reverse Device Characteristics | ||||||
| IS | Reverse current | — | — | 16 | A | VGS=0V, TC=100°C, ≤25% duty cycle |
VSD |
Reverse voltage a | — | 1.8 | — |
V | VGS=0V, IS=16A |
| — | 1.3 | — | VGS=0V, IS=8A | |||
| tRR | Reverse recovery time | — | 33 | — | ns | IS=16A, VDD=400V, di/dt=1000A/ms |
| QRR | Reverse recovery charge | — | 89 | — | nC | |
(di/dt)RDMC |
Reverse diode di/dt, repetitive b |
— |
— |
1200 |
A/µs | |
IRDMC1 | Reverse diode switching current, repeti- tive (dc) c, e |
— |
— |
18 |
A | Circuit implementation and parameters on page 3 |
IRDMC2 | Reverse diode switching current, repeti- tive (ac) c, e |
— |
— |
23 |
A | Circuit implementation and parameters on page 3 |
(di/dt)RDMT |
Reverse diode di/dt, transient d |
— |
— |
2600 |
A/µs | |
IRDMT | Reverse diodeswitching current, transi- ent d,e |
— |
— |
28 |
A | Circuit implementation and parameters on page 3 |
Notes:
| 文件名称 | 版本 | 描述 | 下载 |
|---|---|---|---|
| GSR065D25-datasheet-CN | V1.0 | 中文参数说明文档. | 下载 |
江苏镓宏半导体有限公司
江苏镓宏半导体有限公司(原徐州金沙江半导体有限公司)成立于2021年，项目发起人为氮化镓领域(GaN HEMT、氮化镓HEMT等GaN 功率晶体管器件，以及氮化镓外延片、氮化镓应用技术)领军人物， 以业内领先的氮化镓功率器件和其全新应用为拳头产品，充分发挥国际领先的6-8寸硅基氮化镓功率器件全套生产制造技术的优势，汇集供应链资源、核心技术、产品制造、核心客户、资本市场和地方政府支持等关键资源，组织筹建新型的IDM产品平台，助力中国在第三代半导体产业领域的跨越式发展。
