GSR065D013 series 650V, 150m Ω GaN FETs are normally closed devices. It provides superior reliability and performance by combining the most advanced high-voltage GaNHEMT with low-voltage silicon MOSFETs.

GaN chip power supply chip GaN chip third generation semiconductor
Detail DataSheet

Product introduction

GSR065D013A(650VSuperGaN ® GaNFETinPQFN)

GSR065D013  Series 650V, 150m Ω; Gallium nitride (GaN) FET; It is a normally closed device& nbsp; It combines the most advanced high-voltage GaNHEMT  With low-voltage silicon MOSFET to provide excellent reliability and performance. It provides higher efficiency than silicon through lower gate charge, lower cross loss and smaller reverse recovery charge.

Product characteristics

  • GaN technology certified by JEDEC
  • Production test of dynamic on resistance
  • Robust design, defined as
    • Natural life test
    • Wide gate safety margin
    • Transient overvoltage capacity
  • Very low QRR
  • Reduce cross loss
  • RoHS compliant; Standard and halogen-free instruction package


Product benefits

  • Improve the efficiency of hard switching and soft switching circuits
  • Increase power density
  • Reduce system size and weight
  • Lower overall system cost
  • Easy to drive with common grid drivers
  • GSD pin layout improves high-speed design


Key Specifications  
VDS (V) min 650 
VDSS(TR)  (V) max 800 
RDS(on)  (mΩ) max* 180 
QRR (nC) typ 40 
QG (nC) typ 

Absolute Maximum Rating;(Tc=25 ° C  unless otherwise stated)


Symbol Parameter Limit Value Unit 
VDSS Drain to source voltage (TJ = -55°C to 150°C) 650 V  
VDSS(TR)  Transient drain to source voltage a 800 
VGSS Gate to source voltage   ±20 
PD Maximum power dissipation @TC=25°C 52 
ID   Continuous drain current @TC=25°C b13 
 Continuous drain current @TC=100°C b8.4 
IDM Pulsed drain current (pulse width: 10µs) 60 
TC Operating temperature Case  -55 to +150 °C 
TJ  Junction  -55 to +150 °C 
TS Storage temperature -55 to +150 °C 
TSOLD Reflow soldering temperature c 260 °C 


  1. In off-state, spike duty cycle D<0.01, spike duration <30s. Nonrepetitive. 
  2. For increased stability at high current operation, see Circuit Implementation on page 3 c.           Reflow MSL3 



Thermal Resistance 

Symbol Parameter Typical Unit 
RΘJC Junction-to-case  2.4 °C/W 
RΘJA Junction-to-ambient d 50 °C/W 


d.     Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling, with 6cm2 copper area and 70µm thickness) 


Electrical Parameters (TJ=25°C unless otherwise stated)

Symbol Parameter Min Typ Max Unit Test Conditions 
Forward D evice Characteristics     
VDSS(BL) Maximum drain-source voltage 650 — — VGS=0V 
VGS(th) Gate threshold voltage 3.3 4.8 VDS=VGS, ID=0.5mA 
ΔVGS(th)/TJ Gate threshold voltage temperature coefficient — -5.8 — mV/°C 
RDS(on)eff Drain-source on-resistance a   — 150 180 mΩ VGS=10V, ID=8.5A, TJ=25°C 
— 307 — VGS=10V, ID=8.5A, TJ=150°C 
IDSS  Drain-to-source leakage current — 2.5 25 µA VDS=650V, VGS=0V, TJ=25°C 
— 10 — VDS=650V, VGS=0V, TJ=150°C 
IGSS  Gate-to-source forward leakage current — — 100 nA VGS=20V 
Gate-to-source reverse leakage current — — -100 VGS=-20V 
CISS Input capacitance — 598 — pF VGS=0V, VDS=400V, f=1MHz       
COSS Output capacitance — 30 — 
CRSS Reverse transfer capacitance — — 
CO(er) Output capacitance, energy related b — 43 — pF VGS=0V, VDS=0V to 400V 
CO(tr)  Output capacitance, time related c — 85 — 
QG Total gate charge — — nCV DS=400V, VGS=0V to 10V, ID=8.5A   
QGS Gate-source charge — 3.3 — 
QGD Gate-drain charge — — 
QOSS Output charge — 34 — nCVGS=0V, VDS=0V to 400V  
tD(on) Turn-on delay — 37.8 — ns  

VDS=400V, VGS=0V to 12V, 

ID=10A, RG=70Ω, ZFB=240Ω at 

100MHz ( See Figure 14) 

tR Rise time — 5.2 — 
tD(off) Turn-off delay — 48 — 
tF Fall time — — 


  1. Dynamic RDS(on) value; see Figures 18 and 19 for conditions 
  2. Equivalent capacitance to give same stored energy from 0V to 400V 
  3. Equivalent capacitance to give same charging time from 0V to 400V 


Electrical Parameters (TJ=25°C unless otherwise stated)

Symbol Parameter Min Typ Max Unit Test Conditions 
Reverse Devi ce Characteristics      
IS Reverse current — — 8.3 V GS=0V, TC=100°C, ≤20% duty cycle 
VSD  Reverse voltage a — 2.4 — VGS=0V, IS=10A  
  — 1.6 —  VGS=0V, IS=5A 
tRR Reverse recovery time — 31 — ns IS=10A, VDD=400V,  di/dt=1000A/ms 
QRR Reverse recovery charge — 40 — nC 


a.       Includes dynamic RDS(on) effect 


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Ganhonor Semiconductor Co., Ltd

Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.


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