| Package | Mode | Vds(V) | Ron(mΩ) | Id(A) 25°C | Vth(V) | Application |
|---|---|---|---|---|---|---|
| GSR065E030 | 650 | 50 | 5.5 | 0-6 | 各类充电，电源产品。 | |
| GSR065D25 | 650 | 85 | 25 | 20 | 小功率充电产品。 | |
| GSR065D200 | 650 | 18 | 80 | 6 | 大功率电路。 | |
| GSR065D095 | 650 | 18 | 95 | 20 | 中功率电路。 | |
| GSR065D013A | 650 | 150 | 13 | 20 | 小功率电路。 | |
| GSR065E011 | 650 | 150 | 11 | 7 | 小功率电路 | |
| GSR065D100 | 650 | 22 | 100 | 6 | 大功率电路。 | |
| GSR900D035 | 900 | 50 | 34 | 20 | 中功率电路。 | |
| GSR065D34 | 650 | 50 | 34 | 20 | 小功率电路。 | |
| GSR065E060B | 650 | 25 | 60 | 6 | 中功率电路 |
Ganhonor Semiconductor Co., Ltd
Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.
