GSR065D046 650V, 15 m Ω GaN FET is a normally closed device using GSR semiconductor Gen V platform. It provides superior reliability and performance by combining the most advanced high-voltage GaNHEMT with low-voltage silicon MOSFETs. The Gen V platform uses advanced epitaxial and patented design technologies to simplify manufacturability, while improving device efficiency by reducing gate charge, output capacitance, cross loss and reverse recovery charge.
GSR065D046650V, 35m Ω GaN FET; GSRSemicatorsGenIV; Normally off device of the platform. It combines the most advanced high-voltage GaNHEMT With low-voltage silicon MOSFET to provide excellent reliability and performance.
GenIV The platform uses advanced epitaxy and patented design technology to simplify manufacturability, while improving the device performance by reducing gate charge, output capacitance, cross loss and reverse recovery charge
• GaN technology certified by JEDEC& nbsp;•& nbsp;& nbsp; Production test of dynamic on resistance
• Robust design, defined as
Wide gate safety margin
Transient overvoltage capacity
• Enhanced surge current capability
•Very low QRR
• Cross loss reduction
•Enable totem column bridgeless PFC design
Increase power density
Reduce system size and weight
Lower overall system cost
| Key Specifications | |
| VDSS (V) | 650 |
| V(TR)DSS (V) | 725 |
| RDS(on)eff (mΩ) max* | 18 |
| QRR (nC) typ | 430 |
| QG (nC) typ | 68 |
| Symbol | Parameter | Limit Value | Unit | |
| VDSS | Drain to source voltage (TJ = -55°C to 150°C) | 650 | V | |
| V(TR)DSS | Transient drain to source voltage a | 725 | ||
| VGSS | Gate to source voltage | ±20 | ||
| PD | Maximum power dissipation @TC=25°C | 276 | W | |
| ID | Continuous drain current @TC=25°C b | 95 | A | |
| Continuous drain current @TC=100°C b | 60 | A | ||
| IDM | Pulsed drain current (pulse width: 10µs) | 600 | A | |
| TC | Operating temperature | Case | -55 to +150 | °C |
| TJ | Junction | -55 to +150 | °C | |
| TS | Storage temperature | -55 to +150 | °C | |
| TSOLD | Soldering peak temperature c | 260 | °C | |
Notes:
| Symbol | Parameter | Max | Unit | |
| RΘJC | Junction-to-case | 0.45 | °C/W | |
| RΘJA | Junction-to-ambient | 40 | °C/W |
Recommended gate drive: (0V, 12V) with RG=15Ω
| Gate Ferrite Bead (FB1) | Required DC Link RC Snubber (RCDCL) a | Recommended Switching Node RC Snubber (RCSN) b,c |
| 80-120 Ω at 100MHz | [10nF + 3.3 Ω] x 3 | Not necessary |
Notes:
| Symbol | Parameter | Min | Typ | Max | Unit | Test Conditions |
| Forward Device Characteristics | ||||||
| V(BL)DSS | Drain-source voltage | 650 | — | — | V | VGS=0V |
| VGS(th) | Gate threshold voltage | 3.3 | 4 | 4.8 | V | VDS=VGS, ID=2mA |
| RDS(on)eff | Drain-source on-resistance a | — | 15 | 18 | mΩ | VGS=10V, ID=60A |
| — | 31 | — | VGS=10V, ID=60A, TJ=150°C | |||
| IDSS | Drain-to-source leakage current | — | 7 | 70 | µA | VDS=650V, VGS=0V |
| — | 50 | — | VDS=650V, VGS=0V, TJ=150°C | |||
| IGSS | Gate-to-source forward leakage current | — | — | 400 | nA | VGS=20V |
| Gate-to-source reverse leakage current | — | — | -400 | VGS=-20V | ||
| CISS | Input capacitance | — | 4670 | — | pF | VGS=0V, VDS=400V, f=1MHz |
| COSS | Output capacitance | — | 312 | — | ||
| CRSS | Reverse transfer capacitance | — | 8 | — | ||
| CO(er) | Output capacitance, energy related b | — | 497 | — | pF | VGS=0V, VDS=0V to 400V |
| CO(tr) | Output capacitance, time related c | — | 1020 | — | ||
| QG | Total gate charge | — | 68 | 100 | nC | V DS=400V, VGS=0V to 10V, ID=60A |
| QGS | Gate-source charge | — | 30 | — | ||
| QGD | Gate-drain charge | — | 18 | — | ||
| QOSS | Output charge | — | 430 | — | nC | VGS=0V, VDS=0V to 400V |
| tD(on) | Turn-on delay | — | 78 | — | ns | VDS=400V, VGS=0V to 12V, RG=15, ZFB=120 at 100MHz, ID=60A |
| tR | Rise time | — | 20 | — | ||
| tD(off) | Turn-off delay | — | 132 | — | ||
| tF | Fall time | — | 10 | — | ||
Notes:
| Symbol | Parameter | Min | Typ | Max | Unit | Test Conditions |
| Reverse Devi ce Characteristics | ||||||
| IS | Reverse current | — | — | 60 | A | V GS=0V, TC=100°C ≤15% duty cycle |
| VSD | Reverse voltage a | — | 1.5 | — | V | VGS=0V, IS=60A |
| — | 1.1 | — | VGS=0V, IS=30A | |||
| tRR | Reverse recovery time | — | 100 | — | ns | IS=60A, VDD=400V, di/dt=1000A/µs |
| QRR | Reverse recovery charge | — | 430 | — | nC | |
| (di/dt)RM | Reverse diode di/dt b | — | — | 3500 | A/µs | Circuit implementation and parameters on page 3 |
Notes:
Reverse conduction di/dt will not exceed this max value with recommended RG.
| Name | Version | Description | Download |
|---|---|---|---|
| GSR065D095A-datasheet-CN | V1.0 | 中文参数说明文档. | Download |
Ganhonor Semiconductor Co., Ltd
Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.
