GSR065E060B

GSR065E060 is an automotive 650 V enhanced silicon based GaN power transistor. The characteristics of GaN allow high current, high voltage and high switching frequency. GaN Systems innovates through industry-leading advances, such as patented Island Technology ® And GaNPX ® Encapsulation. Island Technology ® Cell layout realizes high current bare chip and high yield. GaNPX ® The package can achieve low inductance and low thermal resistance in a small package. GSR065E060B is a bottom cooled transistor, which can provide extremely low thermal resistance of the case for demanding high-power applications. These features combine to provide a very efficient power switch.

GaN chip GaN third generation semiconductor Jinshajiang Semiconductor

Detail DataSheet

Product introduction

650V enhanced power transistor
Bottom cooling, low inductance GaNPX ®& nbsp; encapsulation
RDS(on) = 25mΩ
IDS(max) =& nbsp; 60A
Ultra low FOM
Simple grid drive requirements; (0 V to 6 V)
Transient withstand grid drive; (-20 V / +10 V)
Very high switching frequency& nbsp; (> 10 MHz)
Fast and controllable lifting time
Reverse conduction capacity
Zero reverse recovery loss
Small 11x9mm2 PCB; Space occupied
Double grid pads optimize board layout
RoHS3 (6+4) compliant

application

Car charger
Traction drive device
DC-DC converter
Industrial motor drive
PV inverter
No bridge totem pole

Product benefits

GSR065E060 is an automotive 650V; Enhanced silicon based GaN power transistor. The characteristics of GaN allow high current, high voltage and high switching frequency. GaNSystems Innovation through industry-leading progress, such as patented IslandTechnology ® And GaNPX ®& nbsp; Encapsulation. IslandTechnology ® Cell layout realizes high current bare chip and high yield. GaNPX ® The package can achieve low inductance and low thermal resistance in a small package. GSR065E060B is a bottom cooled transistor, which can provide extremely low thermal resistance of the case for demanding high-power applications. These features combine to provide a very efficient power switch.

Absolute Maximum Ratings (Tcase = 25 °C except as noted)

Parameter	Symbol	Value	Unit
Operating Junction Temperature	TJ	-55 to +150	°C
Storage Temperature Range	TS	-55 to +150	°C
Drain-to-Source Voltage	VDS	650	V
Transient Drain-to-Source Voltage (Note 1)	VDS(transient)	900	V
Gate-to-Source Voltage	VGS	-10 to + 7	V
Gate-to-Source Voltage - transient (Note 1)	VGS(transient)	-20 to +10	V
Continuous Drain Current (Tcase= 25 °C)	IDS	60	A
Continuous Drain Current (Tcase= 100 °C)	IDS	41	A
Pulse Drain Current (Pulse width 10 µs, VGS = 6 V) (Note 2)	IDS Pulse	120	A

For ≤1 µs
Defined by product design and characterization. Value is not tested to full current in production.

Thermal Characteristics (Typical values unless otherwise noted)

Parameter	Symbol	Value	Units
Thermal Resistance (junction-to-case) – bottom side	RΘJC	0.35	°C /W
Maximum Soldering Temperature (MSL3 rated)	TSOLD	260	°C

Ordering Information

Ordering code	Package type	Packing method	Qty	Reel Diameter	Reel Width
GS-065-060-5-B-A-TR	GaNPX® Bottom-Side Cooled	Tape-and-Reel	2000	13” (330 mm)	24mm
GS-065-060-5-B-A-MR	GaNPX® Bottom-Side Cooled	Mini-Reel	250	7” (180 mm)	24mm

Electrical Characteristics (Typical values at TJ = 25 °C, VGS = 6 V unless otherwise noted)

Parameters	Sym.	Min.	Typ.	Max.	Units	Conditions
Drain-to-Source Blocking Voltage	V(BL)DSS	650			V	VGS = 0 V, IDSS ≤ 120 µA
Drain-to-Source On Resistance	RDS(on)		25	32	mΩ	V GS = 6 V, TJ = 25 °C IDS = 18 A
Drain-to-Source On Resistance	RDS(on)		65		mΩ	VGS = 6 V, TJ = 150 °C IDS = 18 A
Gate-to-Source Threshold	VGS(th)	1.1	1.7	2.6	V	VDS = VGS, IDS = 16.4 mA
Gate-to-Source Current	IGS		320		µA	VGS = 6 V, VDS = 0 V
Gate Plateau Voltage	Vplat		3		V	VDS = 400 V, IDS = 60 A
Drain-to-Source Leakage Current	IDSS		4	120	µA	VDS = 650 V, VGS = 0 V TJ = 25 °C
Drain-to-Source Leakage Current	IDSS		160		µA	VDS = 650 V, VGS = 0 V T J = 150 °C
Internal Gate Resistance	RG		1		Ω	f = 5 MHz, open drain
Input Capacitance	CISS		516		pF	VDS = 400 V VGS = 0 V f = 100 kHz
Output Capacitance	COSS		127		pF
Reverse Transfer Capacitance	CRSS		2.4		pF
Effective Output Capacitance Energy Related (Note 3)	CO(ER)		212		pF	VGS = 0 V VDS = 0 to 400 V
Effective Output Capacitance Time Related (Note 4)	CO(TR)		338		pF	VGS = 0 V VDS = 0 to 400 V
Total Gate Charge	QG		14		nC	VGS = 0 to 6 V VDS = 400 V
Gate-to-Source Charge	Q GS		3.8		nC

Gate-to-Drain Charge	QGD		4.1		nC
Output Charge	QOSS		135		nC	VGS = 0 V, VDS = 400 V
Reverse Recovery Charge	QRR		0		nC

CO(ER) is the fixed capacitance that would give the same stored energy as COSS while VDS is rising from 0 V to the stated VDS.
CO(TR) is the fixed capacitance that would give the same charging time as COSS while VDS is rising from 0 V to the stated VDS.

Electrical Characteristics cont’d (Typical values at TJ = 25 °C, VGS = 6 V unless otherwise noted)

Parameters	Sym.	Min.	Typ.	Max.	Units	Conditions
Turn-On Delay	tD(on)		8.1		ns	VDD = 400 V, VGS = +6 V/-3 V IDS = 20 A, RG(on) = 10 Ω, RG(off) = 2 Ω, L = 65 µH, LP = 4 nH (Notes 5,6,7)
Rise Time	t R		8.5		ns
Turn-Off Delay	tD(off)		9.8		ns
Fall Time	tF		7.7		ns
Switching Energy during turn-on	Eon		117		µJ
Switching Energy during turn-off	Eoff		17.2		µJ
Output Capacitance Stored Energy	E OSS		17		µJ	VDS = 400 V VGS = 0 V, f = 100 kHz

See Figure 16 for switching test circuit diagram.
See Figure 17 for switching time definition waveforms.
LP = parasitic inductance.

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Name	Version	Description	Download
GSR065E060B-datasheet-CN	V1.0	中文参数说明文档.	Download