GSR900D035 series 900V, 50m Ω GaN FETs are normally closed devices. It provides superior reliability and performance by combining the most advanced high-voltage GaNHEMT with low-voltage silicon MOSFETs. It provides higher efficiency than silicon through lower gate charge, lower cross loss and smaller reverse recovery charge.
900VCascode GaN FET inTO-247(source tab)
Product Description
GSR900D035 series 900V, 50m Ω; Gallium nitride (GaN) FET; It is a normally closed device& nbsp; It combines the most advanced high-voltage GaNHEMT With low-voltage silicon MOSFET to provide excellent reliability and performance.
It provides higher efficiency than silicon through lower gate charge, lower cross loss and smaller reverse recovery charge.
| Key Specifications | |
| VDS (V) | 900 |
| V(TR)DSS (V) max | 1000 |
| RDS(on)eff (mΩ) max* | 63 |
| QRR (nC) typ | 156 |
| QG (nC) typ | 15 |
* Reflects both static and dynamic on-resistance; see Figures 18 and 19
Product application
| Symbol | Parameter | Limit Value | Unit | |
| ID | Continuous drain current @TC=25°C a | 34 | A | |
| Continuous drain current @TC=100°C a | 22 | A | ||
| IDM | Pulsed drain current (pulse width: 10µs) | 150 | A | |
| di/dtRDMC | Reverse diode di/dt, repetitive b | 1600 | A/µs | |
| IRDMC1 | Reverse diode switching current, repetitive (dc) c | 24 | A | |
| IRDMC2 | Reverse diode switching current, repetitive (ac) c | 28 | A | |
| di/dtRDMT | Reverse diode di/dt, transient d | 3000 | A/µs | |
| IRDMT | Reverse diode switching current, transient | 36 | A | |
| V(TR)DSS | Transient drain to source voltage e | 1000 | V | |
| VGSS | Gate to source voltage | ±20 | V | |
| PD | Maximum power dissipation @TC=25°C | 119 | W | |
| TC | Operating temperature | Case | -55 to +150 | °C |
| TJ | Junction | -55 to +150 | °C | |
| TS | Storage temperature | -55 to +150 | °C | |
| TSOLD | Soldering peak temperature f | 260 | °C | |
| - | Mounting Torque | 80 | N cm | |
Notes:
a. For increased stability at high current operation, see Circuit Implementation on page 3 b. Continuous switching operation
c. Definitions: dc = dc to dc converter topologies; ac = inverter and PFC topologies, 50-60Hz line frequency d. ≤300 pulses in 1 second
| Symbol | Parameter | Typical | Unit | |
| RΘJC | Junction-to-case | 1.05 | °C/W | |
| RΘJA | Junction-to-ambient | 40 | °C/W |
| Required DC Link RC Snubber (RCDCL) a | Recommended Switching Node RC Snubber (RCSN) b |
| [10nF + 8Ω] x 2 | 100pF + 10Ω |
Notes:
| Symbol | Parameter | Min | Typ | Max | Unit | Test Conditions |
| Forward Device Characteristics | ||||||
| V(BL)DSS | Maximum drain-source voltage | 900 | — | — | V | VGS=0V |
| VGS(th) | Gate threshold voltage | 3.4 | 3.9 | 4.4 | V | VDS=VGS, ID=0.7mA |
| ΔVGS(th)/TJ | Gate threshold voltage temperature coefficient | — | -6.5 | — | mV/°C | |
| RDS(on)eff | Drain-source on-resistance a | — | 50 | 63 | mΩ | VGS=10V, ID=22A |
| — | 105 | — | VGS=10V, ID=22A, TJ=150°C | |||
| IDSS | Drain-to-source leakage current | — | 4 | 40 | µA | VDS=900V, VGS=0V |
| — | 15 | — | VDS=900V, VGS=0V, TJ=150°C | |||
| IGSS | Gate-to-source forward leakage current | — | — | 100 | nA | VGS=20V |
| Gate-to-source reverse leakage current | — | — | -100 | VGS=-20V | ||
| CISS | Input capacitance | — | 1000 | — | pF | VGS=0V, VDS=600V, f=1MHz |
| COSS | Output capacitance | — | 115 | — | ||
| CRSS | Reverse transfer capacitance | — | 3.5 | — | ||
| CO(er) | Output capacitance, energy related b | — | 153 | — | pF | VGS=0V, VDS=0V to 600V |
| CO(tr) | Output capacitance, time related c | — | 260 | — | ||
| QG | Total gate charge | — | 15 | — | nC | VDS=600V, VGS=10V, ID=22A |
| QGS | Gate-source charge | — | 5 | — | ||
| QGD | Gate-drain charge | — | 4.7 | — | ||
| QOSS | Output charge | — | 155 | — | nC | VGS=0V, VDS=0V to 600V |
| tD(on) | Turn-on delay | — | 48 | — | ns | V DS=600V, VGS=10V, ID=22A RG=25Ω, 4A driver |
| tR | Rise time | — | 12 | — | ||
| tD(off) | Turn-off delay | — | 70 | — | ||
| tF | Fall time | — | 12 | — | ||
| Reverse Device Characteristics | ||||||
| IS | Reverse current | — | — | 22 | A | V GS=0V, TC=100°C, ≤25% duty cycle |
| VSD | Reverse voltage a | — | 2.2 | 2.6 | V | VGS=0V, IS=22A |
| — | 1.6 | 1.9 | VGS=0V, IS=11A | |||
| tRR | Reverse recovery time | — | 53 | — | ns | IS=22A, VDD=600V, di/dt=1000A/µs |
| QRR | Reverse recovery charge | — | 156 | — | nC | |
Notes:
a. Reflects both static and dynamic on-resistance; dynamic on-resistance test setup and waveform; see Figures 14 and 15 for conditions b. Equivalent capacitance to give same stored energy from 0V to 600V
c. Equivalent capacitance to give same charging time from 0V to 600V
| Name | Version | Description | Download |
|---|---|---|---|
| GSR900D035A-datasheet-CN | V1.0 | 中文参数说明文档. | Download |
Xuzhou GSR Semiconductor Co., Ltd
Xuzhou GSR Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.
