GSR065D034 650V, 50 m Ω GaN FET is a normally closed device. It provides superior reliability and performance by combining the most advanced high-voltage GaNHEMT with low-voltage silicon MOSFETs. Advanced epitaxy and patented design technology are used to simplify manufacturability, and device efficiency is improved by reducing gate charge, output capacitance, cross loss and reverse recovery charge.
GSR065D34（650VSuperGaN ® FETinTO-263）
GSR065D034650V、50mΩ Gallium nitride (GaN) FET; It is a normally closed device. It combines the most advanced high-voltage GaNHEMT With low-voltage silicon MOSFET to provide excellent reliability and performance.
Advanced epitaxy and patented design technology are used to simplify manufacturability, and device efficiency is improved by reducing gate charge, output capacitance, cross loss and reverse recovery charge.
Product characteristics
| Key Specifications | |
| VDSS (V) | 650 |
| VDSS(TR)(V) | 800 |
| RDS(on)eff (mΩ) max* | 60 |
| QRR (nC) typ | 120 |
| QG (nC) typ | 16 |
Absolute Maximum Rating;(Tc=25 ° C unless otherwise stated)
| Symbol | Parameter | Limit Value | Unit | |
| VDSS | Drain to source voltage (TJ = -55°C to 150°C) | 650 | V | |
| VDSS(TR) | Transient drain to source voltage a | 800 | ||
| VGSS | Gate to source voltage | ±20 | ||
| PD | Maximum power dissipation @TC=25°C | 119 | W | |
| ID | Continuous drain current @TC=25°C b | 34 | A | |
| Continuous drain current @TC=100°C b | 22 | A | ||
| IDM | Pulsed drain current (pulse width: 10µs) | 150 | A | |
| TC | Operating temperature | Case | -55 to +150 | °C |
| TJ | Junction | -55 to +150 | °C | |
| TS | Storage temperature | -55 to +150 | °C | |
| TSOLD | Soldering peak temperature c | 260 | °C | |
Notes:
| Symbol | Parameter | Maximum | Unit | |
| RΘJC | Junction-to-case | 1.05 | °C/W | |
| RΘJA | Junction-to-ambient | 40 | °C/W |
| Symbol | Parameter | Min | Typ | Max | Unit | Test Conditions |
| Forward Device Characteristics | ||||||
| VDSS(BL) | Drain-source voltage | 650 | — | — | V | VGS=0V |
| VGS(th) | Gate threshold voltage | 3.3 | 4 | 4.8 | V | VDS=VGS, ID=0.7mA |
| ΔVGS(th)/TJ | Gate threshold voltage temperature coefficient | — | -6.2 | — | mV/°C | |
| RDS(on)eff | Drain-source on-resistance a | — | 50 | 60 | mΩ | VGS=10V, ID=22A |
| — | 105 | — | VGS=10V, ID=22A, TJ=150°C | |||
| IDSS | Drain-to-source leakage current | — | 4 | 40 | µA | VDS=650V, VGS=0V |
| — | 15 | — | VDS=650V, VGS=0V, TJ=150°C | |||
| IGSS | Gate-to-source forward leakage current | — | — | 100 | nA | VGS=20V |
| — | — | -100 | VGS=-20V | |||
| CISS | Input capacitance | — | 1000 | — | pF | VGS=0V, VDS=400V, f=1MHz |
| COSS | Output capacitance | — | 110 | — | ||
| CRSS | Reverse transfer capacitance | — | 6 | — | ||
| CO(er) | Output capacitance, energy related b | — | 164 | — | pF | VGS=0V, VDS=0V to 400V |
| CO(tr) | Output capacitance, time related c | — | 280 | — | ||
| QG | Total gate charge | — | 16 | 24 | nC | V DS=400V, VGS=0V to 10V, ID=22A |
| QGS | Gate-source charge | — | 6 | — | ||
| QGD | Gate-drain charge | — | 5 | — | ||
| QOSS | Output charge | — | 120 | — | nC | VGS=0V, VDS=0V to 400V |
| tD(on) | Turn-on delay | — | 49.2 | — | ns | VDS=400V, VGS=0V to 10V, ID=22A, Rg=45Ω, ZFB=240Ω at 100MHz (See Figure 14) |
| tR | Rise time | — | 11.3 | — | ||
| tD(off) | Turn-off delay | — | 88.3 | — | ||
| tF | Fall time | — | 10.9 | — | ||
Notes:
| Symbol | Parameter | Min | Typ | Max | Unit | Test Conditions |
| Reverse Devi ce Characteristics | ||||||
| IS | Reverse current | — | — | 22 | A | V GS=0V, TC=100°C, ≤25% duty cycle |
| VSD | Reverse voltage a | — | 2.2 | 2.6 | V | VGS=0V, IS=22A |
| — | 1.6 | 1.9 | VGS=0V, IS=11A | |||
| tRR | Reverse recovery time | — | 50 | — | ns | IS=22A, VDD=400V |
| QRR | Reverse recovery charge | — | 120 | — | nC | |
| (di/dt)RM | Reverse diode di/dt b | — | — | 2500 | A/µs | Circuit implementation and parameters on page 3 |
Notes:
Includes dynamic RDS(on) effect
Reverse conduction di/dt will not exceed this max value with recommended RG.
| Name | Version | Description | Download |
|---|---|---|---|
| GSR065D34A-datasheet-CN | V1.0 | 中文参数说明文档. | Download |
Ganhonor Semiconductor Co., Ltd
Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.
