The D3GaN (direct drive D-mode) GSR065D100A power switch integrates the patented high-density horizontal GaN power transistors into the normally closed products with extremely low RDS (ON) and abnormally high switching performance. D3GaN technology is integrated in an independent high power SMD package, which is very effective in applications requiring high power and efficiency, low volume and cost. It is small in size and low in cost. The integrated safety function ensures the safe operation of the system during startup and shutdown without affecting the switching performance of GaN transistors.
GSR065D100 (direct drive D-mode)
D3GaN (direct drive D-mode) GSR065D100A power switch will be patented high-density horizontal GaN; The power transistor is integrated to have a very low; RDS(ON) And abnormal high efficiency switching performance. D3GaN technology is integrated in an independent high power SMD package, which is very effective in applications requiring high power and efficiency, low volume and cost. It is small in size and low in cost. The integrated safety function ensures the safe operation of the system during startup and shutdown without affecting GaN Switching performance of transistors.
| Parameter | Value |
| VDS(V) | 650 |
| RDS(ON)(mΩ) | 22 |
| QG(nC) | 41 |
| ID,pulse(A) | 250 |
| ID(A) | 100 |
Electrical parameters(Tc=25 º C unless otherwise stated)
Parameter |
Symbol | Values |
Unit |
Conditions | ||
| Min | Typical | Max | ||||
| Continuousdraincurrent | ID | - - | - - | 100 80 | A | TC=25°C TC=100°C |
| Pulseddraincurrent1) | ID,pulse | - | - | 250 | A | |
| Gatesourcevoltage2) | VGS | -25 | - | +6 | V | |
| Powerdissipation | PTOT | - | - | 278 | W | |
Operatingandstoragetemperature | Tj,Tstg | -55 | - | +150 |
°C | |
| TC | - | - | +150 | |||
| Continuousreversecurrent | Is | - | - | 100 | A | |
| Reversepulsecurrent1) | Is,pulse | - | - | 250 | A | |
| Thermalcharacteristics | ||||||
Parameter |
Symbol | Values |
Unit |
Conditions | ||
| Min | Typical | Max | ||||
| Thermalresistance,junction-case |
RθJC |
- |
- |
0.3 |
| Junction totopthermal pad |
Thermalresistance,junction- ambient | RθJA | - | - | 65 |
| |
Solderingpeakbody temperature | Tp | - | - | 260 | °C | |
Timewithin5°Cfrompeak solderingtemperature | tc | 30 | S | |||
| Param(25 C) | ||||||
| Parameter | Symbol | Values | Unit | Conditions | ||
| Min | Typical | Max | ||||
| Static | ||||||
| Drain-sourcebreakdownvoltage | V(BR)DS | 650 | - | 800 | V | VGS=-15V,Id=1mA |
| Gatethresholdvoltage1)2) | Vth | 6.3 | 6.8 | 8.7 | V | ID=1mA,VDD=15V |
Drainsourceleakagecurrent1) |
IDSS | - | 20 | 60 |
µA | VGS=-15V VDS=650VTj=25°C |
| - | 75 | 200 | VGS=-15VVDS=650VTj=150°C | |||
| GaNGateleakagecurrent | IGSS | - | 0.01 | 200 | uA | VDS=400VVGS=-15V |
| Gateresistance | RG | - | 1.4 | - | Ω | f=1Mhz |
Drain-sourceonstateresistance |
RDS(ON) | - | 22 | 27 |
mΩ | VG=15V ID=35ATj=25°C |
| - | 42 | 52 | VG=15VID=35A Tj=150°C | |||
| Reversevoltagedrop-GaNnonconductive |
VR | - | - | 7.5 |
V | ID=10ATj=25°C |
| - | - | 9.5 | ID=10ATj=150°C | |||
| Reversevoltagedrop-GaNconductive |
VR | - | - | 0.2 |
V | ID=10ATj=25°C |
| - | - | 0.4 | ID=10ATj=150°C | |||
| Reverserecoverytime | trr | - | - | 0 | ns | |
| Reverserecoverycharge | Qrr | - | - | 0 | nC | |
| OutputCharge | Qoss | - | - | 171 | nC | VG=0VVDS=400V |
| Activationsignal2) | V(As,En) | - | 0 | - | V | VDD=-15V |
| Dynamic | ||||||
| Inputcapacitance | Ciss | - | 760 | 800 |
pF | f=1MHzVG=0VVDS=400V |
| Outputcapacitance | Coss | - | 200 | 240 | ||
| Reversetransfercapacitance | Crss | - | 26 | 30 | ||
| EffectiveOutputCapacitance,EnergyRelated | CO(ER) | - | - | 278 | pF | VG=0V VDS=0to400V |
| Turn-ondelaytime3) | td(on) | - | 9 | - |
ns | VDS=400VVG=0-15V 3)Rcon=100Ω 3)Rcoff=20Ohm ID=35A |
| Falltime3) | tf | - | 10.8 | - | ||
| Turn-offdelaytime3) | td(off) | - | 15.5 | - | ||
| Risetime3) | tr | - | 6.5 | - | ||
| Param(Tc=25ºC) | ||||||
Parameter |
Symbol | Values |
Unit |
Conditions | ||
| Min | Typical | Max | ||||
| Gatechargecharacteristics | ||||||
| Gatetosourcecharge1) | QGS | - | 4.3 | - |
nC |
VGS V2)=0to10V VDS=400VID=30A |
| Gatetodraincharge1) | QGD | - | 33 | - | ||
| Totalgatecharge1) | QG | - | 41 | - | ||
| Gateplateauvoltage1) | Vplateau | 6 | - | 7 | V | |
| CasetodrainCapacitance | ||||||
| Capacitance | CC | - | 20 | - | pF | @1 MHz 0.1VRMS |
| Pin Detail | ||||||
| Parameter | Symbol | Values | Unit | Conditions | ||
| Min | Typical | Max | ||||
| Pin1Activationsignal2) | ||||||
| Disablevoltage | Pin1 | 0 | - | 9.1 | V | VDS=400V |
| Enablevoltage | Pin1 | 9.3 | 15 | 15 | ||
| Pin2Comsignal3) | ||||||
| Voltageatdisablemode | Pin2 | 8 |
V | VDS>20V | ||
| VoltageatEnablemode | Pin2 | 0 | 0 | 0.1 | V31=Id*0.002 | |
| Pin3Gate2) | ||||||
GateVoltagefornon-Conducting mode | Pin3 | 0 | - | 4.5 | V | VDS=400V |
| GateVoltageforconductingmode | Pin3 | 5.5 | - | 12 | ||
| Pin4ComPower2) | ||||||
| Pin4 | 10 | 15 | 15 | V | ||
| Pin5Enablemustbeconnectedtopin1 | ||||||
| Picture | Name | Type | Description | Detail |
|---|---|---|---|---|
| GSR065D200 | High power GaN chips | GSR065D200 is a hig... | 查看 |
| Name | Version | Description | Download |
|---|---|---|---|
| GSR065D100-datasheet-CN | V1.0 | 中文参数说明文档. | Download |
Ganhonor Semiconductor Co., Ltd
Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.
