GSR065E030

GSR065E030 is an enhanced GaN on Silicon power transistor. The characteristics of GaN allow high current, high breakdown voltage and high switching frequency. This is a bottom cooled transistor, which can provide extremely low shell thermal resistance for demanding high-power applications. GSR semiconductor uses advanced epitaxy and design technologies to simplify manufacturability while improving efficient power switches.

Gallium nitride chip gallium nitride third generation semiconductor Jinshajiang semiconductor

Detail DataSheet

Features

650 V enhancement mode power transistor
Bottom-cooled, 8x8 mm PDFN package
RDS(on) = 50 mΩ
IDS(max) = 30 A
Simple gate drive requirements (0 V to 6 V)
Transient tolerant gate drive (-20 V / +10 V)
High switching frequency (> 1 MHz)
Fast and controllable fall and rise times
Reverse conduction capability
Zero reverse recovery loss
Source Sense (SS) pin for optimized gate drive

Applications

Bridgeless Totem Pole PFC
Consumer, Industrial and Datacenter High Density Power Supply
High Power Adapters
LED Lighting Drivers
Appliance and Industrial Motor Drives
Solar Inverter
Uninterruptable Power Supplies
Laser Drivers
Wireless Power Transfer

Description

The GSR065E030 is an enhancement mode GaNon-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GSR065E030 is a bottom-side cooled transistor that offers low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

Absolute Maximum Ratings (Tcase = 25 °C except as noted)

Parameter	Symbol	Value	Unit
Operating Junction Temperature	TJ	-55 to +150	°C
Storage Temperature Range	TS	-55 to +150	°C
Drain-to-Source Voltage	VDS	650	V
Drain-to-Source Voltage - transient (Note 1)	VDS(transient)	850	V
Gate-to-Source Voltage	VGS	-10 to +7	V
Gate-to-Source Voltage - transient (Note 1)	VGS(transient)	-20 to +10	V
Continuous Drain Current (Tcase = 25 °C)	IDS	30	A
Continuous Drain Current (Tcase = 100 °C)	IDS	20	A
Pulse Drain Current (Pulse width 10 µs, VGS = 6 V) (Note 2)	IDS Pulse	60	A

For < 100 µs
Defined by product design and characterization. Value is not tested to full current in production.

Thermal Characteristics (Typical values unless otherwise noted)

Parameter	Symbol	Value	Units
Thermal Resistance (junction-to-case) – bottom side	RΘJC	0.5	°C / W
Thermal Resistance (junction-to-ambient) (Note 3)	RΘJA	35	°C / W
Maximum Soldering Temperature (MSL3 rated)	TSOLD	260	°C

Device mounted on 1.6 mm PCB thickness FR4, 4-layer PCB with 2 oz. copper on each layer. The recommendation for thermal vias under the thermal pad is 0.3 mm diameter (12 mil) with 0.635 mm pitch (25 mil). The copper layers under the thermal pad and drain pad are 25 x 25 mm2 each. The PCB is mounted in horizontal position without air stream cooling.

Ordering Information

Ordering code	Package type	Packing method	Qty	Reel Diameter	Reel Width
GS-065-030-2-L-TR	8x8 mm PDFN	Tape-and-Reel	3000	13” (330 mm)	16 mm
GS-065-030-2-L-MR	8x8 mm PDFN	Mini-Reel	250	7” (180 mm)	16 mm

Electrical Characteristics (Typical values at TJ = 25 °C, VGS = 6 V unless otherwise noted)

Parameters	Sym.	Min.	Typ.	Max.	Units	Conditions
Drain-to-Source Blocking Voltage	V(BL)DSS	650			V	VGS = 0 V, IDSS ≤ 58 µA
Drain-to-Source On Resistance	RDS(on)		50	68	mΩ	VGS = 6 V, TJ = 25°C IDS = 5.5 A
Drain-to-Source On Resistance	RDS(on)		127		mΩ	VGS = 6 V, TJ = 150 °C IDS = 5.5 A
Gate-to-Source Threshold	VGS(th)	1.1	1.7	2.6	V	VDS = VGS, IDS = 7.5 mA
Gate-to-Source Current	IGS		182		µA	VGS = 6 V, VDS = 0 V
Gate Plateau Voltage	Vplat		3.5		V	VDS = 400 V, IDS = 30 A
Drain-to-Source Leakage Current	IDSS		2	58	µA	VDS = 650 V, VGS = 0 V TJ = 25 °C
Drain-to-Source Leakage Current	IDSS		70		µA	VDS = 650 V, VGS = 0 V TJ = 150 °C
Internal Gate Resistance	RG		1.3		Ω	f = 5 MHz, open drain
Input Capacitance	CISS		235		pF	VDS = 400 V VGS = 0 V f = 100 kHz
Output Capacitance	COSS		60		pF
Reverse Transfer Capacitance	CRSS		0.6		pF
Effective Output Capacitance Energy Related (Note 4)	CO(ER)		96		pF	VGS = 0 V VDS = 0 to 400 V
Effective Output Capacitance Time Related (Note 5)	CO(TR)		150		pF	VGS = 0 V VDS = 0 to 400 V
Total Gate Charge	QG		6.7		nC	VGS = 0 to 6 V VDS = 400 V
Gate-to-Source Charge	Q GS		1.9		nC

Gate-to-Drain Charge	QGD		2		nC
Output Charge	QOSS		61		nC	VGS = 0 V, VDS = 400 V
Reverse Recovery Charge	QRR		0		nC

CO(ER) is the fixed capacitance that would give the same stored energy as COSS while VDS is rising from 0 V to the stated VDS
CO(TR) is the fixed capacitance that would give the same charging time as COSS while VDS is rising from 0 V to the stated VDS.

Electrical Characteristics cont’d (Typical values at TJ = 25 °C, VGS = 6 V unless otherwise noted)

Parameters	Sym.	Min.	Typ.	Max.	Units	Conditions
Turn-On Delay	tD(on)		8.2		ns	VDD = 400 V, VGS = +6/-3 V, IDS = 15 A, RG(on) = 15 Ω, RG(off) = 2 Ω, L = 90 µH, LP = 12 nH (Notes 6, 7, 8)
Rise Time	t R		6.3		ns
Turn-Off Delay	tD(off)		10.8		ns
Fall Time	tF		5.7		ns
Switching Energy during turn-on	Eon		50		µJ
Switching Energy during turn-off	Eoff		10		µJ
Output Capacitance Stored Energy	E OSS		8		µJ	VDS = 400 V VGS = 0 V, f = 100 kHz

See Figure 16 for switching test circuit diagram.
See Figure 17 for switching time definition waveforms.
LP = parasitic inductance.

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Name	Version	Description	Download
GSR065E030-datasheet-CN	V1.0	中文参数说明文档.	Download