GSR065D046 650V, 35m Ω GaN FET is a normally closed device using GSR Semiconductors Gen IV platform. It provides superior reliability and performance by combining the most advanced high-voltage GaNHEMT with low-voltage silicon MOSFETs. The Gen IV platform uses advanced epitaxial and patented design technologies to simplify manufacturability, while improving device efficiency by reducing gate charge, output capacitance, cross loss and reverse recovery charge.
Product introduction
GSR065D046650V, 35m Ω GaN FET; GSRSemicatorsGenIV; Normally off device of the platform. It combines the most advanced high-voltage GaNHEMT With low-voltage silicon MOSFET to provide excellent reliability and performance.
GenIV The platform uses advanced epitaxy and patented design technology to simplify manufacturability, while improving device efficiency by reducing gate charge, output capacitance, cross loss and reverse recovery charge.
Product characteristics
• GaN technology certified by JEDEC
• Production test of dynamic on resistance
• Robust design, defined as
— Wide gate safety margin
— Transient overvoltage capacity
• Enhanced surge current capability
• Very low QRR
• Cross loss reduction
Product benefits
• Enable totem column bridgeless PFC design
— Increase power density
— Reduce system size and weight
— Lower overall system cost
Product benefits
• Improve the efficiency of hard switching and soft switching circuits
• Easy to use Common grid drivers are easy to drive
• GSD pin layout improves high-speed design
• Data communication
• Wide range of industrial applications
• PV inverter
• Servo motor application
| Key Specifications | |
| VDSS (V) | 650 |
| VDSS(TR)(V) | 800 |
| RDS(on)eff (mΩ) max* | 41 |
| QRR (nC) typ | 150 |
| QG (nC) typ | 22 |
| Symbol | Parameter | Limit Value | Unit | |
| VDSS | Drain to source voltage (TJ = -55°C to 150°C) | 650 | V | |
| VDSS(TR) | Transient drain to source voltage a | 800 | ||
| VGSS | Gate to source voltage | ±20 | ||
| PD | Maximum power dissipation @TC=25°C | 156 | W | |
| ID | Continuous drain current @TC=25°C b | 46.5 | A | |
| Continuous drain current @TC=100°C b | 29.5 | A | ||
| IDM | Pulsed drain current (pulse width: 10µs) | 240 | A | |
| TC | Operating temperature | Case | -55 to +150 | °C |
| TJ | Junction | -55 to +150 | °C | |
| TS | Storage temperature | -55 to +150 | °C | |
| TSOLD | Soldering peak temperature c | 260 | °C | |
Notes:
Electrical Parameters (TJ=25°C unless otherwise stated)
| Symbol | Parameter | Min | Typ | Max | Unit | Test Conditions |
| Forward Device Characteristics | ||||||
| VDSS(BL) | Drain-source voltage | 650 | — | — | V | VGS=0V |
| VGS(th) | Gate threshold voltage | 3.3 | 4 | 4.8 | V | VDS=VGS, ID=1mA |
| ΔVGS(th)/TJ | Gate threshold voltage temperature coefficient | — | -6.5 | — | mV/°C | |
| RDS(on)eff | Drain-source on-resistance a | — | 35 | 41 | mΩ | VGS=10V, ID=30A |
| — | 72 | — | VGS=10V, ID=30A, TJ=150°C | |||
| IDSS | Drain-to-source leakage current | — | 3 | 30 | µA | VDS=650V, VGS=0V |
| — | 20 | — | VDS=650V, VGS=0V, TJ=150°C | |||
| IGSS | Gate-to-source forward leakage current | — | — | 400 | nA | VGS=20V |
| Gate-to-source reverse leakage current | — | — | -400 | VGS=-20V | ||
| CISS | Input capacitance | — | 1500 | — | pF | VGS=0V, VDS=400V, f=1MHz |
| COSS | Output capacitance | — | 147 | — | ||
| CRSS | Reverse transfer capacitance | — | 5 | — | ||
| CO(er) | Output capacitance, energy related b | — | 220 | — | pF | VGS=0V, VDS=0V to 400V |
| CO(tr) | Output capacitance, time related c | — | 380 | — | ||
| QG | Total gate charge | — | 22 | — | nC | V DS=400V, VGS=0V to 10V, ID=32A |
| QGS | Gate-source charge | — | 8.4 | — | ||
| QGD | Gate-drain charge | — | 6.6 | — | ||
| QOSS | Output charge | — | 150 | — | nC | VGS=0V, VDS=0V to 400V |
| tD(on) | Turn-on delay | — | 60 | — | ns | VDS=400V, VGS=0V to 12V, RG=30, ID=32A, ZFB=240Ω at 100MHz (See Figure 15) |
| tR | Rise time | — | 10 | — | ||
| tD(off) | Turn-off delay | — | 94 | — | ||
| tF | Fall time | — | 10 | — | ||
| Eoff | Turn off Energy | — | 82 | — | J | VDS=400V, VGS=0V to 12V, RG=30, ID=32A, ZFB=180Ω at |
| Eon | Turn on Energy | — | 206 | — | J | 100MHz |
Notes:
Electrical Parameters (TJ=25°C unless otherwise stated)
| Symbol | Parameter | Min | Typ | Max | Unit | Test Conditions |
| Reverse Devi ce Characteristics | ||||||
| IS | Reverse current | — | — | 29.5 | A | V GS=0V, TC=100°C ≤25% duty cycle |
| VSD | Reverse voltage a | — | 1.8 | — | V | VGS=0V, IS=32A |
| — | 1.3 | — | VGS=0V, IS=16A | |||
| tRR | Reverse recovery time | — | 59 | — | ns | IS=32A, VDD=400V, di/dt=1000A/s |
| QRR | Reverse recovery charge | — | 150 | — | nC | |
| (di/dt)RM | Reverse diode di/dt b | — | — | 3200 | A/µs | Circuit implementation and parameters on page 3 |
Notes:
Reverse conduction di/dt will not exceed this max value with recommended RG.
| Name | Version | Description | Download |
|---|---|---|---|
| GSR065D046-datasheet-CN | V1.0 | 中文参数说明文档. | Download |
Ganhonor Semiconductor Co., Ltd
Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.
