GSR065D046(650V 35mΩ GaN FET)

GSR065D046 650V, 35m Ω GaN FET is a normally closed device using GSR Semiconductors Gen IV platform. It provides superior reliability and performance by combining the most advanced high-voltage GaNHEMT with low-voltage silicon MOSFETs. The Gen IV platform uses advanced epitaxial and patented design technologies to simplify manufacturability, while improving device efficiency by reducing gate charge, output capacitance, cross loss and reverse recovery charge.

Gallium nitride chip Gallium nitride GaN chip Third generation semiconductor Jinshajiang Semiconductor
Detail DataSheet

Product introduction

GSR065D046650V, 35m Ω GaN FET; GSRSemicatorsGenIV; Normally off device of the platform. It combines the most advanced high-voltage GaNHEMT  With low-voltage silicon MOSFET to provide excellent reliability and performance.

GenIV  The platform uses advanced epitaxy and patented design technology to simplify manufacturability, while improving device efficiency by reducing gate charge, output capacitance, cross loss and reverse recovery charge.

Product characteristics

• GaN technology certified by JEDEC

•  Production test of dynamic on resistance

•  Robust design, defined as

—  Wide gate safety margin

—  Transient overvoltage capacity

•  Enhanced surge current capability

•  Very low QRR

•  Cross loss reduction


Product benefits

•  Enable totem column bridgeless PFC design

—  Increase power density

—  Reduce system size and weight

—  Lower overall system cost

Product benefits

•  Improve the efficiency of hard switching and soft switching circuits

•  Easy to use Common grid drivers are easy to drive

•  GSD pin layout improves high-speed design


• Data communication

• Wide range of industrial applications

• PV inverter

• Servo motor application


Key Specifications  
VDSS (V) 650 
VDSS(TR)(V)  800 
RDS(on)eff  (mΩ) max* 41 
QRR (nC) typ 150 
QG (nC) typ 22 

Absolute Maximum Ratings (Tc=25°C unless otherwise stated.) 

Symbol Parameter Limit Value Unit 
VDSS Drain to source voltage (TJ = -55°C to 150°C) 650 V  
VDSS(TR) Transient drain to source voltage a 800 
VGSS Gate to source voltage   ±20 
PD Maximum power dissipation @TC=25°C 156 
ID   Continuous drain current @TC=25°C b46.5 
 Continuous drain current @TC=100°C b29.5 
IDM Pulsed drain current (pulse width: 10µs) 240 
TC Operating temperature Case  -55 to +150 °C 
TJ Junction  -55 to +150 °C 
TS Storage temperature -55 to +150 °C 
TSOLD Soldering peak temperature c 260 °C 


  1. In off-state, spike duty cycle D<0.01, spike duration <30µs, none repetitive. 
  2. For increased stability at high current operation, see Circuit Implementation on page 3 
  3. For 10 sec., 1.6mm from the case 


Electrical Parameters (TJ=25°C unless otherwise stated)

Symbol Parameter Min Typ Max Unit Test Conditions 
Forward Device Characteristics    
VDSS(BL) Drain-source voltage 650 — — VGS=0V  
VGS(th) Gate threshold voltage 3.3 4.8 VDS=VGS, ID=1mA 
ΔVGS(th)/TJ Gate threshold voltage temperature coefficient — -6.5 — mV/°C 
RDS(on)eff  Drain-source on-resistance a   — 35 41 mΩ VGS=10V, ID=30A 
  — 72 —  VGS=10V, ID=30A, TJ=150°C 
IDSS  Drain-to-source leakage current — 30 µA VDS=650V, VGS=0V 
  — 20 —  VDS=650V, VGS=0V, TJ=150°C 
IGSS  Gate-to-source forward leakage current — — 400 nA VGS=20V  
 Gate-to-source reverse leakage current — — -400  VGS=-20V  
CISS Input capacitance — 1500 — pF VGS=0V, VDS=400V, f=1MHz       
COSS Output capacitance — 147 — 
CRSS Reverse transfer capacitance — — 
CO(er) Output capacitance, energy related b — 220 — pF VGS=0V, VDS=0V to 400V 
CO(tr)  Output capacitance, time related c — 380 —   
QG Total gate charge — 22 — nC   V DS=400V, VGS=0V to 10V, ID=32A   
QGS Gate-source charge — 8.4 — 
QGD Gate-drain charge — 6.6 — 
QOSS Output charge — 150 — nC   VGS=0V, VDS=0V to 400V  
tD(on) Turn-on delay — 60 — ns  

VDS=400V, VGS=0V to 12V, 

RG=30, ID=32A, ZFB=240Ω at 

100MHz (See Figure 15) 

tR Rise time — 10 — 
tD(off) Turn-off delay — 94 — 
tF Fall time — 10 — 
Eoff Turn off Energy — 82 — J 

VDS=400V, VGS=0V to 12V, 

RG=30, ID=32A, ZFB=180Ω at 

Eon Turn on  Energy — 206 — J 100MHz 


  1. Dynamic on-resistance; see Figures 19 and 20 for test circuit and conditions 
  2. Equivalent capacitance to give same stored energy as VDS rises from 0V to 400V 
  3. Equivalent capacitance to give same charging time as VDS rises from 0V to 400V 

Electrical Parameters (TJ=25°C unless otherwise stated)

Symbol Parameter Min Typ Max Unit Test Conditions 
Reverse Devi ce Characteristics      
IS Reverse current — — 29.5 V GS=0V, TC=100°C ≤25% duty cycle 
VSD  Reverse voltage a — 1.8 — VGS=0V, IS=32A  
  — 1.3 —  VGS=0V, IS=16A  
tRR Reverse recovery time — 59 — ns IS=32A, VDD=400V,  di/dt=1000A/s 
QRR Reverse recovery charge — 150 — nC 
(di/dt)RM Reverse diode di/dt b — — 3200 A/µs Circuit implementation and parameters on page 3 


  1. Includes dynamic RDS(on) effect 

Reverse conduction di/dt will not exceed this max value with recommended RG. 



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Ganhonor Semiconductor Co., Ltd

Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.


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