Eng

GSR Semiconductor was shortlisted in the 2022 ZOL International Frontier Science and Technology Innovation Competition - the final of the International Third Generation Semiconductor Thematic Competition

Recently,GSRSemiconductor's"EVSuperFastChargingMod...

Detail

GSR065D34

briefintroductionGSR065D34(650VSuperGaN®FETinTO-26...

Detail

GSR065D013A

ProductintroductionGSR065D013A(650VSuperGaN®GaNFET...

Detail

GSR065D095

ProductintroductionGSR065D095(650VSuperGaN™FETinTO...

Detail

GaN 140W Super Flash Charge

•Thevolumeisonly60%ofthesamepoweradapter,whichisco...

Detail

GaN 100W Super Flash Charge

•Thevolumeisonly60%ofthesamepoweradapter,whichisco...

Detail
Ganhonor Semiconductor Co., Ltd

Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.

Contact

Copyright © 2023 江苏镓宏半导体有限公司.版权所有 |

苏公网安备 32039102000462号

| 苏ICP备2022007342号