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GSR Semiconductor was shortlisted in the 2022 ZOL International Frontier Science and Technology Innovation Competition - the final of the International Third Generation Semiconductor Thematic Competition

Recently,GSRSemiconductor's"EVSuperFastChargingMod...

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VDP-INV3L100K series vehicle inverter

Inthefieldofpassengervehicleinverter,Sibasedsemico...

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GSR22650 on-board OBC

TheGaNbasedsingle-phaseOBCproductsdevelopedanddesi...

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GSR900D035

900VCascodeGaNFETinTO-247(sourcetab)ProductDescrip...

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GSR065E060B

Productintroduction650VenhancedpowertransistorBott...

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GSR065E030

Features650VenhancementmodepowertransistorBottom-c...

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GSR065D046(650V 35mΩ GaN FET)

ProductintroductionGSR065D046650V,35mΩGaNFET;GSRSe...

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GSR065D34

briefintroductionGSR065D34(650VSuperGaN®FETinTO-26...

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GSR065D095

ProductintroductionGSR065D095(650VSuperGaN™FETinTO...

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GSR065E011

ProductDescriptionGSR065E011(650V150mΩGaNFET)GSR06...

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Xuzhou GSR Semiconductor Co., Ltd

Xuzhou GSR Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.

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