Xuzhou GSR Semiconductor Co., Ltd. was established in 2021. The project sponsor is a leading figure in the field of gallium nitride (GaN). With the industry leading GaN power devices and their new applications as the flagship products, it gives full play to the advantages of the full set of production and manufacturing technologies of the internationally leading 6-8 inch silicon based GaN power devices, and gathers key resources such as supply chain resources, core technologies, product manufacturing, core customers, capital markets and local government support, Organize and prepare to build a new IDM product platform to help China's leapfrog development in the third generation semiconductor industry.
Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.