GSR Semiconductor GaN Device Project was officially signed. The project is invested and constructed by FastCharging Limited. The total investment in the first phase is about 100 million US dollars. A complete 6-inch production line is newly built, about 150 sets of equipment are invested, and the capacity to expand to 8-inch line is maintained. It is proposed to rent the original Jingwang Optoelectronics 102 and 103 plants in the development zone, about 7000 square meters of super clean rooms and 850 square meters of offices.
GSR Capital was established in 2004. Its investment covers semiconductor devices and new materials, Internet and wireless communication technologies and their applications, new media and other emerging areas of high growth. FastCharging Limited is the holding company of GSR Semiconductor GaN Devices Project. This project focuses on the design of GaN devices used in electric vehicles.
Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.