Recently, GSR Semiconductor's "EV Super Fast Charging Module Based on the Third Generation Semiconductor" project was selected by the event management team for the final of the "2022 ZOL International Frontier Science and Technology Innovation Competition - International Third Generation Semiconductor Special Competition" (hereinafter referred to as the "Competition"). The final roadshow will be held on November 18, and 15 projects that have passed the preliminary and final rounds will compete fiercely through the "cloud" to fully demonstrate the broad prospects and unique charm of the third generation semiconductor industry.
Guided by Beijing Municipal Commission of Science and Technology, ZOL Science and Technology Park Management Committee, and Shunyi District People's Government of Beijing, the competition was co sponsored by Shunyi District Science and Technology Commission of Beijing, Shunyi District Bureau of Economy and Information Technology of Beijing, Shunyi Park Management Committee of ZOL Science and Technology Park, Beijing Shunyi Science and Technology Innovation Group Co., Ltd., and Beijing Third Generation Semiconductor Industry Technology Innovation Strategic Alliance (CASA).
Launched in August 2022, this competition has attracted 71 enterprises and entrepreneurial teams from all links and fields of the third generation semiconductor industry chain across the country. Through online voting and expert scoring, the competition selected 15 high-quality projects to participate in the final. The shortlisted projects focus on the key core technologies in various fields of the third generation semiconductor, such as consumer electronics and robots, intelligent lighting and display technology, new energy grid connection and energy Internet, 5G communications, new energy vehicles and rail transit. The projects are highly innovative and market-oriented. Since they were held for the first time in 2018, they have received extensive attention from all sectors of society!
I wish the 2022 ZOL International Frontier Science and Technology Innovation Competition - the International Third Generation Semiconductor Thematic Competition a complete success.
Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.