Based on GAN's high electron mobility, it supports higher gains at higher frequencies and efficiency, which means that higher frequency power conversion can be achieved, allowing the design and manufacturing of smaller sized devices to adapt to smaller and thinner technologies without affecting power, reliability, or safety.
Appearance size
type | specifications |
size | 190 * 115 * 40mm |
weight | ≤ 0.88kg |
Heat dissipation method | Forced air cooling |
temperature range | -40 ℃~55 ℃ |
power density | 39W/in3 |
Electrical parameters
&Nbsp; | parameter | minimum value | Nominal value | Maximum value | unit |
&Nbsp; &Nbsp; &Nbsp; &Nbsp; &Nbsp; Forward rectification AC-DC | AC input voltage | one hundred and eighty | two hundred and twenty | two hundred and sixty | V |
Line frequency | &Nbsp; | fifty | &Nbsp; | Hz | |
output power | &Nbsp; | two thousand | &Nbsp; | W | |
PF | &Nbsp; | zero point nine nine | &Nbsp; | &Nbsp; | |
THD | &Nbsp; | &Nbsp; | 5% | &Nbsp; | |
output voltage | forty-five | fifty | fifty-five | V | |
Output current | &Nbsp; | forty | &Nbsp; | A | |
Output voltage accuracy | &Nbsp; | &Nbsp; | 1% | &Nbsp; | |
Output current accuracy | &Nbsp; | &Nbsp; | 1% | &Nbsp; | |
conversion efficiency | &Nbsp; | ≥ 95% | 96% | &Nbsp; | |
Protection function | Over and under voltage; Overcurrent, short circuit, over temperature protection | ||||
&Nbsp; | parameter | minimum value | Nominal value | Maximum value | unit |
&Nbsp; &Nbsp; &Nbsp; &Nbsp; &Nbsp; Reverse inversion DC-AC | DC input voltage | forty-five | fifty | fifty-five | V |
DC input current | &Nbsp; | forty | &Nbsp; | A | |
output power | &Nbsp; | two thousand | &Nbsp; | W | |
output voltage | &Nbsp; | two hundred and twenty | &Nbsp; | V | |
Output line frequency | &Nbsp; | fifty | &Nbsp; | Hz | |
Output voltage accuracy | &Nbsp; | &Nbsp; | 1% | &Nbsp; | |
Output current accuracy | &Nbsp; | &Nbsp; | 1% | &Nbsp; | |
conversion efficiency | &Nbsp; | ≥ 95% | 96% | &Nbsp; | |
Protection function | Over and under voltage; Overcurrent, short circuit, over temperature protection | ||||
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Ganhonor Semiconductor Co., Ltd
Ganhonor Semiconductor Co., Ltd. was established in 2021. The project initiator is a leader in the field of gallium nitride (GaN、GaN HEMT、GaN FET). With the industry-leading gallium nitride power devices and their new applications as the flagship products, it takes the full advantages of the world's leading manufacturing technologies on the 6-8 inch GaN-on-Silicon power electronics platform, and the synergy of supply chain resources, core technology, manufacturing capability, key customers, capital market, local organization support and other key resources. This provides a new IDM platform to help achieve leapfrog development in the industry of the third generation semiconductors.
